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ADS

ADS - Advanced Design System

This page provides examples of circuit designs and model implemementations based on ADS (Keysight technologies)

 

DescriptionReferencesDownloads
Nonlinear Discrete Convolution electron device model implementation (with Backgating I/V model for low-frequency dispersion) - A.Santarelli, F.Filicori, G.Vannini, P.Rinaldi, “A backgating model including self-heating for low-frequency dispersive effects in III-V FETs", Electronics Letters, Vol.34, No. 20, pp.1974-1975, October 1998.
- A.Costantini, R.P.Paganelli, P.A.Traverso, D.Argento, G.Favre, M.Pagani, A.Santarelli, G.Vannini, F.Filicori, “Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model", IEEE MTT-S, International Microwave Symposium, Seattle, Washington, USA, June 2-7, 2002.
NDC_Bkg.zap
Nonlinear Discrete Convolution electron device model implementation (with Empirical I/V model for low-frequency dispersion) - A.Raffo, A.Santarelli, P.A.Traverso, G.Vannini, F.Palomba, F.Scappaviva, M.Pagani, F.Filicori, “Accurate PHEMT Nonlinear Modeling in the Presence of Low-Frequency Dispersive Effects". IEEE Trans. on Microwave Theory and Techniques, Vol.53, no.11, pp., Nov 2005.
- F.Filicori, A.Santarelli, P.A.Traverso, A.Raffo, G.Vannini, M.Pagani, “Non-linear RF device modelling in the presence of low-frequency dispersive phenomena", International Journ. of RF and Microwave Computer-Aided Engineering, “Special issue on INMMIC conference", Jan 2006.
NDC_Emp.zap
Setup for the characterisation of low-frequency dispersive effects through low-frequency I/V measurements under sinusoidal excitation - A.Raffo, A.Santarelli, P.A.Traverso, M.Pagani, G.Vannini, F.Filicori, “Accurate Modeling of Electron Device I/V Characteristics Through a Simplified Large-Signal Measurement Setup", International Journ. of RF and Microwave Computer-Aided Engineering, “Special issue on microwave power amplifier modelling and design", September 2005. LSLF.zap